欧洲BiCMOS的现状和未来趋势

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8550963

P. Chevalier, W. Liebl, H. Rücker, A. Gauthier, D. Manger, B. Heinemann, G. Avenier, J. Böck

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引用次数: 48

摘要

本文综述了SiGe BiCMOS技术的优势及其在毫米波到太赫兹领域的应用。展示了涵盖Si/SiGe hbt和CMOS节点的最新技术。通过TARANTO项目的介绍，讨论了未来的前景和相关的主要挑战，重点介绍了正在进行的欧洲研究活动，其主要目标是帮助开发600 GHz $\pmb{f}_{\mathbf{MAX}}$纳米级SiGe BiCMOS平台。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SiGe BiCMOS Current Status and Future Trends in Europe

This paper reviews the advantages of SiGe BiCMOS technologies and their applications in the millimeterwave to terahertz domains. The state-of-the-art covering both the Si/SiGe HBTs and the CMOS nodes is shown. Future perspectives and related main challenges are discussed with a focus on the ongoing European research activities through the presentation of the TARANTO project, whose main objective is to help developing 600 GHz $\pmb{f}_{\mathbf{MAX}}$ nanoscale SiGe BiCMOS platforms.

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来源期刊

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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