用于32nm及以上节点互连的多孔二氧化硅超低钾薄膜的研制

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090358

T. Yamazaki, M. Hirakawa, T. Nakayama, H. Murakami

{"title":"用于32nm及以上节点互连的多孔二氧化硅超低钾薄膜的研制","authors":"T. Yamazaki, M. Hirakawa, T. Nakayama, H. Murakami","doi":"10.1109/IITC.2009.5090358","DOIUrl":null,"url":null,"abstract":"Porous silica spin-on dielectrics (SOD) films with low dielectric constant (k ∼ 2.0), high Young's modulus (E ∼ 7.5 GPa), and small pores (∼ 0.2 nm) were obtained only with ultraviolet (UV) curing within 1min at 350 °C but without hydrophobic treatment process. Optimized UV curing condition and composition of precursor solution can give the low-k film applicable to 32 nm-node interconnect technology and beyond.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"31 8","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Development of porous silica ultra low-k films for 32 nm-node interconnects and beyond\",\"authors\":\"T. Yamazaki, M. Hirakawa, T. Nakayama, H. Murakami\",\"doi\":\"10.1109/IITC.2009.5090358\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Porous silica spin-on dielectrics (SOD) films with low dielectric constant (k ∼ 2.0), high Young's modulus (E ∼ 7.5 GPa), and small pores (∼ 0.2 nm) were obtained only with ultraviolet (UV) curing within 1min at 350 °C but without hydrophobic treatment process. Optimized UV curing condition and composition of precursor solution can give the low-k film applicable to 32 nm-node interconnect technology and beyond.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"31 8\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090358\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090358","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

多孔二氧化硅自旋介电体(SOD)薄膜具有低介电常数(k ~ 2.0)、高杨氏模量(E ~ 7.5 GPa)和小孔隙(~ 0.2 nm)，仅在350°C下进行紫外线(UV)固化1min，但不进行疏水处理。优化的紫外光固化条件和前驱体溶液的组成可以得到适用于32nm节点互连技术及以上的低k膜。

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Development of porous silica ultra low-k films for 32 nm-node interconnects and beyond

Porous silica spin-on dielectrics (SOD) films with low dielectric constant (k ∼ 2.0), high Young's modulus (E ∼ 7.5 GPa), and small pores (∼ 0.2 nm) were obtained only with ultraviolet (UV) curing within 1min at 350 °C but without hydrophobic treatment process. Optimized UV curing condition and composition of precursor solution can give the low-k film applicable to 32 nm-node interconnect technology and beyond.

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2009 IEEE International Interconnect Technology Conference

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