面向电路级仿真的氧化物击穿紧凑模型的基础

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532062

M. Saliva, F. Cacho, D. Angot, V. Huard, M. Rafik, A. Bravaix, L. Anghel

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引用次数: 0

摘要

栅极氧化击穿是一个重要的可靠性问题。这一机制在器件层面得到了广泛的研究，但紧凑模型的建立和电路层面的评估要复杂得多。我们首先描述软击穿和硬击穿。然后给出了一个晶体管级的模型。该模型是为大范围的击穿严重程度校准的。最后将该模型应用于电路级。讨论了击穿对静态电流和环振频率的影响。

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Foundations for oxide breakdown compact modeling towards circuit-level simulations

Gate oxide breakdown is an important reliability issue. This mechanism is widely investigated at device level but the development of a compact model and the assessment at circuit level is much more complex to handle. We first characterize soft and hard breakdown. Then a transistor-level model is presented. The model is calibrated for a large range of breakdown severity. Finally the model is used at circuit level. The impact of breakdown on both static current and ring oscillator frequency is discussed.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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