Comparative Study of the Variation of the Influence of Temperature on Carrier Concentration and Electron Drift on Silicon and Gallium Arsenide

In this paper we have used the theoretical concept to study comparatively the influence of temperature on the electron drift mobility and carrier concentration in silicon and gallium arsenide semiconductor material. From the study as shown in graphs from the computation, it was clearly shown that electron drift current density and carrier concentration vary with temperature. It was also observed that the electron drift current density and carrier concentration decreases and sometimes increases for both materials within some values of temperature which might be attributed to the continual lost of energy by the electron drift velocity resulting from the collision of electrons with ionized impurity atoms and with thermally vibrating atoms.