{"title":"高介电常数SOI埋源漏极mosfet的二维亚阈值电流模型","authors":"G. Saramekala, P. Tiwari","doi":"10.1109/AMS.2014.58","DOIUrl":null,"url":null,"abstract":"An analytical surface-potential based sub threshold current model for short-channel recessed-source/ drain (Re-S/D) SOI MOSFETs with high-k dielectric is presented in this paper. The two-dimensional (2D) Poisson's equation has been solved in the channel region with suitable boundary conditions in order to determine the surface potential. The diffusion component of current density is considered for the sub threshold current modeling. The impact of EOT (Effective Oxide Thickness) (t'ox), channel Length (L), gate-dielectric constant (ε'ox) on sub threshold current has been investigated. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLASTM, a two dimensional device simulator from SILVACO.","PeriodicalId":198621,"journal":{"name":"2014 8th Asia Modelling Symposium","volume":"31 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Two-Dimensional Subthreshold Current Model of Recessed-Source/Drain (Re-S/D) SOI MOSFETs with High-k Dielectric\",\"authors\":\"G. Saramekala, P. Tiwari\",\"doi\":\"10.1109/AMS.2014.58\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical surface-potential based sub threshold current model for short-channel recessed-source/ drain (Re-S/D) SOI MOSFETs with high-k dielectric is presented in this paper. The two-dimensional (2D) Poisson's equation has been solved in the channel region with suitable boundary conditions in order to determine the surface potential. The diffusion component of current density is considered for the sub threshold current modeling. The impact of EOT (Effective Oxide Thickness) (t'ox), channel Length (L), gate-dielectric constant (ε'ox) on sub threshold current has been investigated. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLASTM, a two dimensional device simulator from SILVACO.\",\"PeriodicalId\":198621,\"journal\":{\"name\":\"2014 8th Asia Modelling Symposium\",\"volume\":\"31 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 8th Asia Modelling Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AMS.2014.58\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 8th Asia Modelling Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AMS.2014.58","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Two-Dimensional Subthreshold Current Model of Recessed-Source/Drain (Re-S/D) SOI MOSFETs with High-k Dielectric
An analytical surface-potential based sub threshold current model for short-channel recessed-source/ drain (Re-S/D) SOI MOSFETs with high-k dielectric is presented in this paper. The two-dimensional (2D) Poisson's equation has been solved in the channel region with suitable boundary conditions in order to determine the surface potential. The diffusion component of current density is considered for the sub threshold current modeling. The impact of EOT (Effective Oxide Thickness) (t'ox), channel Length (L), gate-dielectric constant (ε'ox) on sub threshold current has been investigated. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLASTM, a two dimensional device simulator from SILVACO.
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