{"title":"一种适用于温度变化大的恶劣工作环境的精密SOI-CMOS智能微传感器前端放大器","authors":"H. Takao, F. Ina, Douzaka T, K. Sawada, M. Ishida","doi":"10.1109/SENSOR.2003.1215350","DOIUrl":null,"url":null,"abstract":"In this paper, a precision SOI-CMOS analog front-end amplifier for smart microsecond interface applicable to severe environment is presented. Although SOI-CMOS circuits can operate over 150/spl deg/C, temperature drift of offset voltage is a serious problem to be solved for precise signal detection. Thus, a novel autozero circuit configuration is applied to stabilize offset voltage of the amplifier precisely at high temperatures where leakage current of switches is not negligible. Offset drift of fabricated SOI-CMOS amplifier was well suppressed below 1mV from RT to 200/spl deg/C without any trimming. This amplifier has essentially high robustness and stability for dramatic temperature change under severe environment.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"7 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A precision SOI-CMOS front-end amplifier for smart microsensors applicable to severe operation environment with large temperature variation\",\"authors\":\"H. Takao, F. Ina, Douzaka T, K. Sawada, M. Ishida\",\"doi\":\"10.1109/SENSOR.2003.1215350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a precision SOI-CMOS analog front-end amplifier for smart microsecond interface applicable to severe environment is presented. Although SOI-CMOS circuits can operate over 150/spl deg/C, temperature drift of offset voltage is a serious problem to be solved for precise signal detection. Thus, a novel autozero circuit configuration is applied to stabilize offset voltage of the amplifier precisely at high temperatures where leakage current of switches is not negligible. Offset drift of fabricated SOI-CMOS amplifier was well suppressed below 1mV from RT to 200/spl deg/C without any trimming. This amplifier has essentially high robustness and stability for dramatic temperature change under severe environment.\",\"PeriodicalId\":196104,\"journal\":{\"name\":\"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)\",\"volume\":\"7 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2003.1215350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2003.1215350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A precision SOI-CMOS front-end amplifier for smart microsensors applicable to severe operation environment with large temperature variation
In this paper, a precision SOI-CMOS analog front-end amplifier for smart microsecond interface applicable to severe environment is presented. Although SOI-CMOS circuits can operate over 150/spl deg/C, temperature drift of offset voltage is a serious problem to be solved for precise signal detection. Thus, a novel autozero circuit configuration is applied to stabilize offset voltage of the amplifier precisely at high temperatures where leakage current of switches is not negligible. Offset drift of fabricated SOI-CMOS amplifier was well suppressed below 1mV from RT to 200/spl deg/C without any trimming. This amplifier has essentially high robustness and stability for dramatic temperature change under severe environment.