一种适用于温度变化大的恶劣工作环境的精密SOI-CMOS智能微传感器前端放大器

H. Takao, F. Ina, Douzaka T, K. Sawada, M. Ishida
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引用次数: 2

摘要

本文提出了一种适用于恶劣环境的智能微秒接口的精密SOI-CMOS模拟前端放大器。虽然SOI-CMOS电路可以工作在150/spl℃以上,但失调电压的温度漂移是精确检测信号需要解决的一个严重问题。因此,在开关漏电流不可忽略的高温环境下,采用了一种新颖的自动调零电路结构来精确稳定放大器的失调电压。制备的SOI-CMOS放大器的偏置漂移在RT到200/spl度/C时被很好地抑制在1mV以下,没有任何修整。该放大器具有很高的鲁棒性和稳定性,可以适应恶劣环境下剧烈的温度变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A precision SOI-CMOS front-end amplifier for smart microsensors applicable to severe operation environment with large temperature variation
In this paper, a precision SOI-CMOS analog front-end amplifier for smart microsecond interface applicable to severe environment is presented. Although SOI-CMOS circuits can operate over 150/spl deg/C, temperature drift of offset voltage is a serious problem to be solved for precise signal detection. Thus, a novel autozero circuit configuration is applied to stabilize offset voltage of the amplifier precisely at high temperatures where leakage current of switches is not negligible. Offset drift of fabricated SOI-CMOS amplifier was well suppressed below 1mV from RT to 200/spl deg/C without any trimming. This amplifier has essentially high robustness and stability for dramatic temperature change under severe environment.
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