L. Mussard, P. Tounsi, P. Austin, J.-M. DorkeI, E. Antonini
{"title":"IGBT电源模块电热建模新方法","authors":"L. Mussard, P. Tounsi, P. Austin, J.-M. DorkeI, E. Antonini","doi":"10.1109/BIPOL.2004.1365805","DOIUrl":null,"url":null,"abstract":"In this paper, an original method for electro-thermal simulation is presented. The originality lies in the effective way of communication between 3D thermal modeling and IGBT-chip electrical model. This method is illustrated by IGBT modules.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"New clectro-thermal modeling method for IGBT power module\",\"authors\":\"L. Mussard, P. Tounsi, P. Austin, J.-M. DorkeI, E. Antonini\",\"doi\":\"10.1109/BIPOL.2004.1365805\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an original method for electro-thermal simulation is presented. The originality lies in the effective way of communication between 3D thermal modeling and IGBT-chip electrical model. This method is illustrated by IGBT modules.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365805\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365805","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New clectro-thermal modeling method for IGBT power module
In this paper, an original method for electro-thermal simulation is presented. The originality lies in the effective way of communication between 3D thermal modeling and IGBT-chip electrical model. This method is illustrated by IGBT modules.