A. Wang, X. Guan, H. Feng, Q. Wu, R. Zhan, Liwu Yang
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引用次数: 5
摘要
本文介绍了一种2.4 GHz全集成a类功率放大器的设计和实现，该放大器采用商用0.35 μ g BiCMOS技术，用于单片双频收发器。在输入功率为-8dBm时，输出功率为18.5dBm, PAE为17%。第二次和第三次谐波分别为-37.5dBc和-32.2dBc。功率放大器从3.3 V电源输出126mA的直流电流，实现27.6 dB的线性增益。制作的模具尺寸仅为1.2 mm乘以1mm。提出了一种改进的PA模型，用于最优功率匹配分析，并在设计中进行了验证
A 2.4 GHz Fully Integrated Class-A Power Ampifier In 0.35μm SiGe BiCMOS Technology
This paper presents a 2.4 GHz fully integrated class-A power amplifier designed and implemented in a commercial 0.35 mum SiGe BiCMOS technology for a single-chip dual-band transceiver. It delivers a power output of 18.5dBm at an input power of -8dBm with a PAE of 17%. The 2nd and 3rd harmonics are -37.5dBc and -32.2dBc, respectively. The power amplifier draws a DC current of 126mA from a 3.3 V supply and achieves a linear gain of 27.6 dB. The fabricated die size is only 1.2 mm times 1 mm. An improved PA model is introduced for optimal power matching analysis that was verified in this design
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