三维分辨率灰调光刻

N. Dumbravescu
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引用次数: 3

摘要

传统的微加工技术:各向同性和各向异性,干法和湿法刻蚀,可以完成几种形状。为了克服这一限制,使用了二元多任务技术或直接EB书写,但使用所谓的“灰调十字”的廉价一步紫外光刻方法似乎是在曝光过程中产生局部强度调制的最佳选择。虽然使用该方法和标准集成电路制造中的常用技术可以很容易地获得任意3D成型的正厚电阻,但也存在一些局限性。通过电子束书写在投影线上实现的最大灰度数仅为200。此外,对于非常厚的电阻,有限的聚焦深度的投影物镜给了一个可怜的横向分辨率。因此,本文提出了一种提高厚抗蚀剂灰调光刻三维分辨率的新方法。通过高分辨率,无论是垂直方向,以及水平方向。特别强调了机械、光学或电子元件制造过程中UV光刻步骤所需的半色调透射掩模的设计、制造和使用。灰调测试网的原始设计和制造方法得到了实验的支持,证明了这种新技术的主要优点:在一次曝光步骤中就可以实现厚抗蚀剂的三维结构,并且获得了超过9:1的宽高比。给出了SEM显微照片中正厚电阻的初步实验结果。光刻工艺的未来优化为这种高3D分辨率结构方法在不同产品的制造过程中的应用开辟了有趣的前景,这些产品具有复杂的光滑轮廓,例如:x射线liga掩模,折射光学和表面浮雕do。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3D resolution gray-tone lithography
With the conventional micro machining technologies: isotropic and anisotropic, dry and wet etching, a few shapes can be done. To overcome this limitation, both binary multi- tasking technique or direct EB writing were used, but an inexpensive one-step UV-lithographic method, using a so- called 'gray-tone reticle', seems to be the best choice to produce local intensity modulation during exposure process. Although, by using this method and common technologies in standard IC fabrication it is easy to obtain an arbitrarily 3D shaping of positive thick resists, there are some limitations, too. The maximum number of gray-levels, on projection reticle, achieved by e-beam writing, are only 200. Also, for very thick resists, the limited focus depth of the projection objective gives a poor lateral resolution. These are the reasons why the author prose da new approach to enhance the 3D resolution of gray-tone lithography applied for thick resist. By a high resolution, both for vertical direction, as well as for horizontal direction. Particular emphasis was put on the design, manufacturing and use of halftone transmission masks, required for UV- lithographic step in the fabrication process of mechanical, optical or electronics components. The original design and fabrication method for the gray-tone test reticle were supported by experiments showing the main advantage of this new technology: the 3D structuring of thick resist in a single exposure step and also a very promising aspect ratio obtained of over 9:1. Preliminary experimental results are presented for positive thick resists in SEM micrographs. A future optimization of the lithographic process opens interesting perspectives for application of this high 3D resolution structuring method in the fabrication process of different products, with imposed complex smooth profiles, such as: x-ray LiGA-masks, refractive optics and surface- relief DOEs.
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