Hongxin Yang, Minghua Li, W. He, Yu Jiang, K. Lim, Wendong Song, V. Y. Zhuo, C. C. Tan, E. Chua, Weijie Wang, Yi Yang, R. Ji
{"title":"新颖的高密度非易失性存储器选择器，超低保持电压和107开/关比","authors":"Hongxin Yang, Minghua Li, W. He, Yu Jiang, K. Lim, Wendong Song, V. Y. Zhuo, C. C. Tan, E. Chua, Weijie Wang, Yi Yang, R. Ji","doi":"10.1109/VLSIT.2015.7223716","DOIUrl":null,"url":null,"abstract":"We present a novel selector made of doped-chalcogenide material. This selector not only achieves low holding voltage (0.2 V) and large on/off ratio (>107), but also exhibits the high on-current density (>1.6 MA/cm2) and large hysteresis window (1.2 V). Besides, excellent selector performances with ultra-low off-state leakage current (10 pA), high switching speed (<;10 ns), high endurance (>109), good thermal stability (up to 180°C) have been demonstrated. Furthermore, the device exhibits good scalability which is suitable for 3D array integrations.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"65 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"40","resultStr":"{\"title\":\"Novel selector for high density non-volatile memory with ultra-low holding voltage and 107 on/off ratio\",\"authors\":\"Hongxin Yang, Minghua Li, W. He, Yu Jiang, K. Lim, Wendong Song, V. Y. Zhuo, C. C. Tan, E. Chua, Weijie Wang, Yi Yang, R. Ji\",\"doi\":\"10.1109/VLSIT.2015.7223716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a novel selector made of doped-chalcogenide material. This selector not only achieves low holding voltage (0.2 V) and large on/off ratio (>107), but also exhibits the high on-current density (>1.6 MA/cm2) and large hysteresis window (1.2 V). Besides, excellent selector performances with ultra-low off-state leakage current (10 pA), high switching speed (<;10 ns), high endurance (>109), good thermal stability (up to 180°C) have been demonstrated. Furthermore, the device exhibits good scalability which is suitable for 3D array integrations.\",\"PeriodicalId\":181654,\"journal\":{\"name\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"volume\":\"65 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"40\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2015.7223716\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel selector for high density non-volatile memory with ultra-low holding voltage and 107 on/off ratio
We present a novel selector made of doped-chalcogenide material. This selector not only achieves low holding voltage (0.2 V) and large on/off ratio (>107), but also exhibits the high on-current density (>1.6 MA/cm2) and large hysteresis window (1.2 V). Besides, excellent selector performances with ultra-low off-state leakage current (10 pA), high switching speed (<;10 ns), high endurance (>109), good thermal stability (up to 180°C) have been demonstrated. Furthermore, the device exhibits good scalability which is suitable for 3D array integrations.
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