用于高频应用的高效高功率InP HEMT放大器

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI:10.1109/DRC.2000.877122

Y.C. Chen, R. Lai, D. Ingram, T. Block, M. Wojtowicz, P. Liu, H. Yen, A. Oki, D. Streit, K. Yano

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引用次数: 2

摘要

只提供摘要形式。在InP衬底上生长的InAlAs-InGaAs hemt具有优异的增益和噪声性能，适用于深亚毫米波区域的放大器应用。使用TRW的sub-0.1 /spl mu/m InP HEMT MMIC技术，已经实现了在170 GHz时具有6 dB噪声系数(Lai et al, 1998)和在215 GHz时具有15 dB增益(Weinreb et al, 1999)的低噪声放大器(LNAs)。另一方面，由于InGaAs通道中的低冲击电离起始场，对于inala -InGaAs hemt在高功率放大器(PA)应用中的适用性一直存在争议。我们在提高InP HEMT功率性能方面的系统方法已经实现了v和w波段固态功率放大器的世界纪录演示(Chen等人，1998年和1999年)。研究结果不仅为InP HEMT技术树立了新的里程碑，而且改变了人们对inala - ingaas HEMT在高功率应用中的适用性的看法。

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Highly efficient high power InP HEMT amplifiers for high frequency applications

Summary form only given. InAlAs-InGaAs HEMTs grown on InP substrates promise excellent gain and noise performance for amplifier applications well into the deep sub-millimeter wave region. Low noise amplifiers (LNAs) with 6 dB noise figure at 170 GHz (Lai et al, 1998) and 15 dB gain at 215 GHz (Weinreb et al, 1999) have been realized using TRW's sub-0.1 /spl mu/m InP HEMT MMIC technology. On the other hand, there has been controversy over the suitability of InAlAs-InGaAs HEMTs for high power amplifier (PA) applications due to the low impact ionization onset field in the InGaAs channel. Our systematic approach in enhancing InP HEMT power performance has enabled the demonstration of world-record solid-state power amplifiers at V-and W-bands (Chen et al, 1998 and 1999). The results not only set a new milestone for InP HEMT technology, but also changed perceptions on the suitability of InAlAs-InGaAs HEMTs for high power applications.

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58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)

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