基于GaN平面肖特基势垒二极管的高频倍增器

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588336

Z. Feng, S. Liang, D. Xing, J. Wang, D. Yang, Y. L. Fang, L. Zhang, X. Y. Zhao

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引用次数: 8

摘要

在这封信中，我们报告了具有直流和射频性能的GaN平面肖特基势垒二极管(sbd)。采用气桥结构，减小了寄生参数。计算出阳极直径为5 μm的二极管在零偏置时的截止频率(fc)为655 GHz。利用四阳极串联GaN sbd芯片，首次实现了103.5 GHz时峰值输出功率为2.1 mW的三倍频器。

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High-frequency multiplier based on GaN planar Schottky barrier diodes

In this letter, we report GaN planar Schottky barrier diodes (SBDs) with the DC and RF performance. The air-bridge structure is adopted to reduce the parasitic parameters. The cut-off frequency (fc) of the diode with an anode diameter of 5 μm is calculated to be 655 GHz at zero bias. By using four anodes series GaN SBDs chip, a frequency tripler with a peak output power of 2.1 mW at 103.5 GHz is demonstrated for the first time.

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来源期刊

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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