L波段射频前端低噪声放大器的设计与仿真

2014 First International Conference on Computational Systems and Communications (ICCSC) Pub Date : 2014-12-01 DOI:10.1109/COMPSC.2014.7032626

Jolly Rajendran, R. Peter

{"title":"L波段射频前端低噪声放大器的设计与仿真","authors":"Jolly Rajendran, R. Peter","doi":"10.1109/COMPSC.2014.7032626","DOIUrl":null,"url":null,"abstract":"In this paper, the design and evaluation of a low noise amplifier, that operates in the L-band, is being discussed. The amplifier was fabricated on FR-4 substrate. ATF-58143 Low Noise Enhancement Mode Pseudomorphic High Electron Mobility Transistor [HEMT] is used. The designed LNA is found to have a gain of 13 dB. The return loss is below -10 dB.","PeriodicalId":388270,"journal":{"name":"2014 First International Conference on Computational Systems and Communications (ICCSC)","volume":"86 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Design and simulation of low noise amplifier for RF front end at L band\",\"authors\":\"Jolly Rajendran, R. Peter\",\"doi\":\"10.1109/COMPSC.2014.7032626\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the design and evaluation of a low noise amplifier, that operates in the L-band, is being discussed. The amplifier was fabricated on FR-4 substrate. ATF-58143 Low Noise Enhancement Mode Pseudomorphic High Electron Mobility Transistor [HEMT] is used. The designed LNA is found to have a gain of 13 dB. The return loss is below -10 dB.\",\"PeriodicalId\":388270,\"journal\":{\"name\":\"2014 First International Conference on Computational Systems and Communications (ICCSC)\",\"volume\":\"86 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 First International Conference on Computational Systems and Communications (ICCSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMPSC.2014.7032626\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 First International Conference on Computational Systems and Communications (ICCSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMPSC.2014.7032626","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文讨论了一种工作在l波段的低噪声放大器的设计与评价。放大器是在FR-4衬底上制作的。ATF-58143低噪声增强模式伪晶高电子迁移率晶体管[HEMT]。所设计的LNA增益为13 dB。回波损耗低于- 10db。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design and simulation of low noise amplifier for RF front end at L band

In this paper, the design and evaluation of a low noise amplifier, that operates in the L-band, is being discussed. The amplifier was fabricated on FR-4 substrate. ATF-58143 Low Noise Enhancement Mode Pseudomorphic High Electron Mobility Transistor [HEMT] is used. The designed LNA is found to have a gain of 13 dB. The return loss is below -10 dB.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 First International Conference on Computational Systems and Communications (ICCSC)

自引率

0.00%

发文量