a位取代对YMnO/ sub3 /基铁电薄膜磁性和介电行为的影响

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195909

N. Fujimura, H. Sakata, D. Ito, T. Yokota, T. Ito

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引用次数: 0

摘要

研究了a位取代的YMnO/ sub3 /陶瓷和外延薄膜的介电和磁性能。由于Mn/sup 4+/的存在，化学计量多晶体样品呈现p型导电。池- frenkel型载流子发射的I-V特性得到了很好的解释，计算出活化能为0.38 eV。Zr掺杂使载流子密度减小，Li或Mg掺杂使载流子密度增大。虽然所有样品在5k时对外加磁场表现出反铁磁磁化行为，但载流子掺杂的样品表现出寄生铁磁行为(弱铁磁)。外延薄膜具有明显的铁电特性和反铁磁性。用Yb取代Y增强了铁磁相互作用。

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Effect of A-site substitution on the magnetic and dielectric behaviors of YMnO/sub 3/ based ferroelectric thin films

Dielectric and magnetic properties of A-site substituted YMnO/sub 3/ ceramics and epitaxial films were studied. Stoichiometric polycrystalline bulk sample exhibit p-type conduction due to the existence of Mn/sup 4+/. The I-V property is well explained the Pool-Frenkel type carrier emission, and the activation energy is calculated to be 0.38 eV. The carrier density decreases by Zr doping and increases by Li or Mg doping. Although all the samples exhibit antiferromagnetic magnetization behavior against the applied magnetic field at 5 K, carrier doped samples displays parasitic ferromagnetic behavior (weak ferromagnetism). Epitaxial films show distinct ferroelectric property and also exhibit antiferromagnetism. Substituting Y with Yb enhances the ferromagnetic interaction.

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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