一种用于SOI技术的新型自对准衬底二极管结构

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563576

M. Pelella, G. Burbach, A. Salman, A. Beebe, D. Chan, J. Buller

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引用次数: 5

摘要

在这项工作中，我们描述了一种新的自对准二极管和电阻结构，并将其工艺集成到先进的90nm SOI技术中。描述了其优于在SOI薄膜内构建的传统器件结构的器件特性。

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A novel self-aligned substrate-diode structure for SOI technologies

In this work, we describe novel self-aligned diode and resistor structures and their process integration into an advanced 90nm SOI technology. Their superior device characteristics over conventional device structures built within the SOI film is described.

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2005 IEEE International SOI Conference Proceedings

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