MBE生长InGaAsP/InAlAsP多量子阱在1 μm波长区域的光学特性

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516349

T. Yamamoto, M. Kayama, Y. Kawamura

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引用次数: 0

摘要

提出了用于1 μm波长区域光调制器的InGaAsP/InAlAsP多量子阱(mqw)，并采用分子束外延(MBE)生长。详细研究了InAlAsP层、InGaAs/InAlAsP MQW层和InGaAsP/InAlAsP MQW层的光致发光和光吸收等光学性质。InGaAsP/InAlAsP MQW层在1.06 μm处有清晰的吸收边。

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Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region

InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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