MOS电容器中Si和SiO/sub /输运的耦合蒙特卡罗模拟

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871201

P. Palestri, L. Selmi, M. Pavesi, F. Widdershoven, E. Sangiorgi

{"title":"MOS电容器中Si和SiO/sub /输运的耦合蒙特卡罗模拟","authors":"P. Palestri, L. Selmi, M. Pavesi, F. Widdershoven, E. Sangiorgi","doi":"10.1109/SISPAD.2000.871201","DOIUrl":null,"url":null,"abstract":"We present a Monte Carlo (MC) model comprising SiO/sub 2/ and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for nonvolatile memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"24 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Coupled Monte Carlo simulation of Si and SiO/sub 2/ transport in MOS capacitors\",\"authors\":\"P. Palestri, L. Selmi, M. Pavesi, F. Widdershoven, E. Sangiorgi\",\"doi\":\"10.1109/SISPAD.2000.871201\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a Monte Carlo (MC) model comprising SiO/sub 2/ and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for nonvolatile memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.\",\"PeriodicalId\":132609,\"journal\":{\"name\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"volume\":\"24 6\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2000.871201\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

我们提出了一个包含SiO/sub /和Si输运的蒙特卡罗(MC)模型，适用于模拟MOS结构中的载流子倍增。该代码扩展了全频带态密度(DoS)和散射率计算在硅到高能量。对5-15 nm非易失性存储器应用的氧化物的模拟表明，氧化物输运对冲击电离产生的孔洞分布的作用，这通常被认为是氧化物降解、SILC和击穿的起源。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Coupled Monte Carlo simulation of Si and SiO/sub 2/ transport in MOS capacitors

We present a Monte Carlo (MC) model comprising SiO/sub 2/ and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for nonvolatile memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

自引率

0.00%

发文量