p+和n+-Si底电极CeO2基ReRAM的研究

2015 China Semiconductor Technology International Conference Pub Date : 2015-03-15 DOI:10.1109/CSTIC.2015.7153330

J. Jin, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai

{"title":"p+和n+-Si底电极CeO2基ReRAM的研究","authors":"J. Jin, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai","doi":"10.1109/CSTIC.2015.7153330","DOIUrl":null,"url":null,"abstract":"In this paper we use the p+-Si and n+-Si as bottom electrode for CeO2 based ReRAM. The work function difference between p+-Si and n+-Si substrate gives out an about 0.6 V shift of the set and reset voltage. The mechanism of this shift was investigated and the set and reset of voltage with pulse width dependence was also concerned depends on p+-Si substrate.","PeriodicalId":130108,"journal":{"name":"2015 China Semiconductor Technology International Conference","volume":"22 48","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An investigation of CeO2 based ReRAM with p+ and n+-Si bottom electrodes\",\"authors\":\"J. Jin, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai\",\"doi\":\"10.1109/CSTIC.2015.7153330\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we use the p+-Si and n+-Si as bottom electrode for CeO2 based ReRAM. The work function difference between p+-Si and n+-Si substrate gives out an about 0.6 V shift of the set and reset voltage. The mechanism of this shift was investigated and the set and reset of voltage with pulse width dependence was also concerned depends on p+-Si substrate.\",\"PeriodicalId\":130108,\"journal\":{\"name\":\"2015 China Semiconductor Technology International Conference\",\"volume\":\"22 48\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 China Semiconductor Technology International Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2015.7153330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 China Semiconductor Technology International Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2015.7153330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文采用p+-Si和n+-Si作为CeO2基ReRAM的底电极。p+-Si衬底和n+-Si衬底之间的功函数差使设置电压和复位电压产生约0.6 V的位移。研究了这种移位的机理，并讨论了脉冲宽度依赖于p+-Si衬底的电压设置和复位。

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An investigation of CeO2 based ReRAM with p+ and n+-Si bottom electrodes

In this paper we use the p⁺-Si and n⁺-Si as bottom electrode for CeO₂ based ReRAM. The work function difference between p⁺-Si and n⁺-Si substrate gives out an about 0.6 V shift of the set and reset voltage. The mechanism of this shift was investigated and the set and reset of voltage with pulse width dependence was also concerned depends on p⁺-Si substrate.

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2015 China Semiconductor Technology International Conference

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