{"title":"具有直流偏置控制的高频高q CMOS有源电感","authors":"A. Ilker Karsilayan, R. Schaumann","doi":"10.1109/MWSCAS.2000.951689","DOIUrl":null,"url":null,"abstract":"The design of a very simple CMOS high-Q active inductor suitable for applications at low supply voltage and high frequencies is discussed. The inductor value, L, and the quality factor, Q, are independently adjustable by two PMOS varactors (variable capacitors). Alternatively, L can be tuned via a bias current. The inductor's DC level is set by a bias voltage. The self-resonance frequency, f/sub r/, is larger than 1GHz and very high values of Q, up to Q=/spl infin/, can be obtained so that circuit can be used for constructing high-frequency oscillators. The performance of the electronic inductor is demonstrated by simulation.","PeriodicalId":437349,"journal":{"name":"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)","volume":" 21","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"56","resultStr":"{\"title\":\"A high-frequency high-Q CMOS active inductor with DC bias control\",\"authors\":\"A. Ilker Karsilayan, R. Schaumann\",\"doi\":\"10.1109/MWSCAS.2000.951689\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of a very simple CMOS high-Q active inductor suitable for applications at low supply voltage and high frequencies is discussed. The inductor value, L, and the quality factor, Q, are independently adjustable by two PMOS varactors (variable capacitors). Alternatively, L can be tuned via a bias current. The inductor's DC level is set by a bias voltage. The self-resonance frequency, f/sub r/, is larger than 1GHz and very high values of Q, up to Q=/spl infin/, can be obtained so that circuit can be used for constructing high-frequency oscillators. The performance of the electronic inductor is demonstrated by simulation.\",\"PeriodicalId\":437349,\"journal\":{\"name\":\"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)\",\"volume\":\" 21\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"56\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2000.951689\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2000.951689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-frequency high-Q CMOS active inductor with DC bias control
The design of a very simple CMOS high-Q active inductor suitable for applications at low supply voltage and high frequencies is discussed. The inductor value, L, and the quality factor, Q, are independently adjustable by two PMOS varactors (variable capacitors). Alternatively, L can be tuned via a bias current. The inductor's DC level is set by a bias voltage. The self-resonance frequency, f/sub r/, is larger than 1GHz and very high values of Q, up to Q=/spl infin/, can be obtained so that circuit can be used for constructing high-frequency oscillators. The performance of the electronic inductor is demonstrated by simulation.