光酸发生器设计中的注意事项

Conner A. Hoelzel, Li Cui, Benjamin D. Naab, J. Park, Philjae Kang, K. Hernandez, S. Coley, Stefan Alexandrescu, Rochelle Rena, J. Cameron, E. Aqad
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引用次数: 0

摘要

传统的极紫外(EUV)光刻用化学放大抗蚀剂由三个基本组分组成:光反应性产酸物质(PAG),用于溶解度切换的酸反应性聚合物,以及用于酸扩散控制的基本组分。PAG成分通常来源于有机铵盐,其中阳离子捕获EUV照射抗蚀剂时产生的二次电子的能力强调了它们在光刻应用中的反应性。因此,有效合理地设计这些材料对于控制抗蚀剂的灵敏度和特征的规律性至关重要。在这里,我们描述了一种强大的方法,用于硅预测的基本性质,包括电子亲和,LUMO能量和相对电荷分布。我们将这些理论值与实验测量相关联,并进一步分析了PAG阳离子性质对EUV照射下抗蚀性能的影响。除了这些阳离子的反应性质外,我们还从阳离子的物理化学性质,特别是极性的角度分析了这些光刻数据。总之,本研究的结果表明,虽然PAG阳离子的电子亲和力可能会驱动对EUV暴露的反应性,但在设计阳离子时必须考虑多种因素,以获得最佳的整体抗蚀性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Considerations in the design of photoacid generators
Conventional chemically amplified resists for extreme ultraviolet (EUV) lithography are comprised of three fundamental components: a photoreactive, acid-generating species (PAG), an acid reactive polymer for solubility switching, and a basic component for acid diffusion control. The PAG component is typically derived from an organic onium salt, wherein the cation’s capacity to capture secondary electrons generated upon EUV irradiation of the resist underscores their reactivity in lithographic applications. Thus, effective rational design of these materials is critical for controlling both sensitivity of the resist and feature regularity. Herein, we describe a robust method for in silico prediction of fundamental properties of onium cations including electron affinity, LUMO energy, and relative charge distribution. We correlate these theoretical values to experimental measurements and further to the influence of PAG cation properties on resist performance under EUV exposure. In addition to the reactive properties of these cations, we analyze these lithographic data in the context of the physicochemical properties of the cations, particularly polarity. In all, the results of this study suggest that while electron affinity of the PAG cation may drive reactivity in response to EUV exposure, multiple factors must be considered in the design of cations for optimal overall resist performance.
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