镉取代对Bi2Sr2Ca2-xCdxCu3O10+δ超导体电学和结构性能影响的制备及研究

K. Jasim, M. A. Thejeel, Adil M. Ibraheim
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引用次数: 2

摘要

本文研究了Cd掺杂对x = 0、0.1、0.2和0.3的Bi2Sr2Ca2-xCdxCu3O10+δ超导体样品的电阻率测量、电容、介电常数和x射线衍射分析的影响。x射线衍射分析表明,样品均呈正交结构,且参数a、b、c均因Cd浓度的增加而发生变化。采用四探针技术测量了相变温度Tc。发现Bi2Sr2Ca1.8Cd0.2Cu3O10+δ化合物在零电阻率下的最佳转变温度为108 K。在室温下测量了介电常数(实部、虚部和损耗因子)在50 ~ 5MHz范围内随频率的变化。发现镉浓度的增加会引起介电常数的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation and Study the Effect of Cadmium Substitution on the Electrical and Structural Properties of Bi2Sr2Ca2-xCdxCu3O10+δ Superconductor
In this work we studied the effect of Cd doping on the resistivity measurements, capacitance, dielectric constant and x – ray diffraction analysis of Bi2Sr2Ca2-xCdxCu3O10+δ superconductor with x = 0, 0.1, 0.2 and 0.3, the samples prepared by solid-state reaction method. X-ray diffraction analysis showed all our samples are orthogonal structures with the changes in the parameters a, b and c due to increase the Cd concentration. The transition temperature Tc measured by using four – probe technique. It was found that the optimum transition temperature at zero resistivity Tc(offset) is 108 K for Bi2Sr2Ca1.8Cd0.2Cu3O10+δ compound. The dielectric constants (real part, imaginary part and loss factor) were measured as a function of frequency in the range (50 – 5MHz) at room temperature. It was found that the increase in cadmium concentration produces change in the dielectric constants.
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