3.5 V宽带CDMA手机低静态漏极电流下功率异质结场效应管畸变分析

1999 IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications (Cat. No. 99TH8390) Pub Date : 1900-01-01 DOI:10.1109/MTTTWA.1999.755125

G. Hau, T. B. Nishimura, N. Iwata

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引用次数: 1

摘要

研究了宽带CDMA (W-CDMA)手机应用中异质结场效应管(HJFET)相邻通道漏功率比(ACPR)与静态漏极电流(I/sub q/)的关系。测量的性能表明，在低I/sub q/条件下，ACPR下降现象导致HJFET的功率增加效率显着提高，而ACPR保持在规格范围内。研究发现，W-CDMA的ACPR特性主要与HJFET的三阶互调(IM/sub 3/)失真有关。ACPR下降源于低I/sub / q/操作下IM/sub 3/失真的类似特征。

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Distortion analysis of a power heterojunction FET under low quiescent drain current for 3.5 V wide-band CDMA cellular phones

The dependence of adjacent channel leakage power ratio (ACPR) of a heterojunction FET (HJFET) on quiescent drain current (I/sub q/) for wide-band CDMA (W-CDMA) cellular phones application is presented. Measured performance demonstrates an ACPR dip phenomenon under a low I/sub q/ condition resulting in a significant improvement on the power added efficiency of the HJFET with the ACPR maintained within the specification. It is found that the W-CDMA ACPR characteristic mainly correlates to the third-order intermodulation (IM/sub 3/) distortion of the HJFET. The ACPR dip arises from a similar characteristic on the IM/sub 3/ distortion under a low I/sub q/ operation.

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1999 IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications (Cat. No. 99TH8390)

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