低功耗CMOS频率比较器

M. Kovác, M. Potocný, D. Arbet, R. Ondica, R. Ravasz, V. Stopjaková
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引用次数: 0

摘要

本文的重点是设计和分析一个全片上频率比较器(FC)在65纳米CMOS技术实现。所提出的FC采用数字预处理阶段,然后是轨对轨输入输出(RRIO)电压比较器,功耗低,单位为$\mu$W。评估精度保持输入频率高达1mhz。该FC设计用于1.2 V的电源电压。FC接受具有独立占空比和延迟的信号,信号之间没有任何相关性,使其成为更复杂集成系统的通用构建块。仿真结果表明,该拓扑对工艺、温度和电源电压变化(PVT)具有鲁棒性。所提出的FC可用于复杂的超低功耗片上系统(SoC)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-Power CMOS Frequency Comparator
This paper is focused on the design and analysis of a fully on-chip frequency comparator (FC) implemented in 65 nm CMOS technology. The proposed FC employs a digital pre-processing stage followed by a rail-to-rail input and output (RRIO) voltage comparator, with low power consumption in units of $\mu$W. Evaluation accuracy is maintained for input frequencies up to 1 MHz. The FC is designed for the supply voltage of 1.2 V. The FC accepts signals with independent duty cycles and delays, without any correlation between the signals, making it an universal building block of more complex integrated systems. Presented simulation results show robustness of the proposed topology over process, temperature and supply voltage variations (PVT). The presented FC was used in complex ultra-low power System on-Chip (SoC).
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