硅-胶体量子点异质结光电探测器的硅表面钝化

IF 15.8 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

ACS Nano Pub Date : 2021-11-10 DOI:10.1021/acsnano.1c08002

Qiwei Xu, I Teng Cheong, Lingju Meng, Jonathan G. C. Veinot, Xihua Wang*

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引用次数: 17

摘要

用一种红外敏感材料(如硫化铅(PbS)胶体量子点(CQDs))敏化晶体硅(c-Si)，为提高硅基光电探测器的红外光灵敏度提供了一种直接的策略。然而，构建基于硅:CQD异质结的高效光电探测器仍然具有挑战性。在此，我们证明了Si表面钝化对于构建高性能Si:CQD异质结光电探测器至关重要。我们研究了一步甲基碘(CH3I)和两步氯化/甲基化工艺对硅表面钝化的影响。瞬态光电流(TPC)和瞬态光电压(TPV)衰减测量表明，两步钝化Si:CQD界面表现出更少的陷阱态和更低的复合速率。将这些钝化衬底集成到原型Si:CQD红外光电二极管中，基于两步钝化的光电二极管在1280 nm处的外量子效率(EQE)为31%，比基于一步CH3I钝化Si的标准器件提高了近2倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors

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Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors

Sensitizing crystalline silicon (c-Si) with an infrared-sensitive material, such as lead sulfide (PbS) colloidal quantum dots (CQDs), provides a straightforward strategy for enhancing the infrared-light sensitivity of a Si-based photodetector. However, it remains challenging to construct a high-efficiency photodetector based upon a Si:CQD heterojunction. Herein, we demonstrate that Si surface passivation is crucial for building a high-performance Si:CQD heterojunction photodetector. We have studied one-step methyl iodine (CH3I) and two-step chlorination/methylation processes for Si surface passivation. Transient photocurrent (TPC) and transient photovoltage (TPV) decay measurements reveal that the two-step passivated Si:CQD interface exhibits fewer trap states and decreased recombination rates. These passivated substrates were incorporated into prototype Si:CQD infrared photodiodes, and the best performance photodiode based upon the two-step passivation shows an external quantum efficiency (EQE) of 31% at 1280 nm, which represents a near 2-fold increase over the standard device based upon the one-step CH3I passivated Si.

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来源期刊

ACS Nano 工程技术-材料科学：综合

CiteScore

26.00

自引率

4.10%

发文量

1627

审稿时长

1.7 months

期刊介绍： ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.