基于algainp的无再生可见红色光子晶体表面发射激光器

IF 2.2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Tsung-Yeh Ku;Chi-Hao Wang;Ming-Chin Hsieh;Gray Lin
{"title":"基于algainp的无再生可见红色光子晶体表面发射激光器","authors":"Tsung-Yeh Ku;Chi-Hao Wang;Ming-Chin Hsieh;Gray Lin","doi":"10.1109/JQE.2023.3325238","DOIUrl":null,"url":null,"abstract":"AlGaInP-based visible red photonic crystal (PC) surface emitting lasers (SELs) without regrowth were demonstrated for the first time. Square-latticed and circular-shaped holes were deeply etched to form the air-pillar PC structure, where indium-tin-oxide was deployed to facilitate both current injection and laser light transmission. The optically pumped and electrically injected PC-SELs lased in wavelength range of 626-667 nm and 650-670 nm, respectively. For the best PC-SEL of 656-nm emissions, threshold current density was as low as 1.4 kA/cm2 and maximum laser power over 18 mW was achieved at 2.5 A. The un-optimized V-shaped PC holes led to weak optical coupling, which was manifested in the reconstructed band structure without clear bandgap opening at \n<inline-formula> <tex-math>$\\Gamma $ </tex-math></inline-formula>\n point. Therefore, one-dimensional lasing oscillation was favored and radiation far-field exhibited two-lobe pattern. Lastly, temperature dependent threshold currents and lasing wavelengths of PC-SELs were measured and investigated in terms of gain-cavity detuning.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AlGaInP-Based Visible Red Photonic Crystal Surface Emitting Lasers Without Regrowth\",\"authors\":\"Tsung-Yeh Ku;Chi-Hao Wang;Ming-Chin Hsieh;Gray Lin\",\"doi\":\"10.1109/JQE.2023.3325238\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaInP-based visible red photonic crystal (PC) surface emitting lasers (SELs) without regrowth were demonstrated for the first time. Square-latticed and circular-shaped holes were deeply etched to form the air-pillar PC structure, where indium-tin-oxide was deployed to facilitate both current injection and laser light transmission. The optically pumped and electrically injected PC-SELs lased in wavelength range of 626-667 nm and 650-670 nm, respectively. For the best PC-SEL of 656-nm emissions, threshold current density was as low as 1.4 kA/cm2 and maximum laser power over 18 mW was achieved at 2.5 A. The un-optimized V-shaped PC holes led to weak optical coupling, which was manifested in the reconstructed band structure without clear bandgap opening at \\n<inline-formula> <tex-math>$\\\\Gamma $ </tex-math></inline-formula>\\n point. Therefore, one-dimensional lasing oscillation was favored and radiation far-field exhibited two-lobe pattern. Lastly, temperature dependent threshold currents and lasing wavelengths of PC-SELs were measured and investigated in terms of gain-cavity detuning.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10286818/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10286818/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

首次证明了基于algainp的可见红色光子晶体(PC)表面发射激光器的非再生特性。深蚀刻方形和圆形孔形成气柱PC结构,在其中部署铟锡氧化物,以促进电流注入和激光传输。光泵浦和电注入PC-SELs的激光波长范围分别为626 ~ 667 nm和650 ~ 670 nm。对于656 nm发射的最佳PC-SEL,阈值电流密度低至1.4 kA/cm2,最大激光功率超过18 mW,为2.5 A。未优化的v形PC孔导致弱光耦合,表现为重建的带结构在$\Gamma $处没有明显的带隙开口。因此,有利于一维激光振荡,辐射远场呈现双瓣模式。最后,从增益-腔失谐的角度对PC-SELs的阈值电流和激光波长进行了测量和研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
AlGaInP-Based Visible Red Photonic Crystal Surface Emitting Lasers Without Regrowth
AlGaInP-based visible red photonic crystal (PC) surface emitting lasers (SELs) without regrowth were demonstrated for the first time. Square-latticed and circular-shaped holes were deeply etched to form the air-pillar PC structure, where indium-tin-oxide was deployed to facilitate both current injection and laser light transmission. The optically pumped and electrically injected PC-SELs lased in wavelength range of 626-667 nm and 650-670 nm, respectively. For the best PC-SEL of 656-nm emissions, threshold current density was as low as 1.4 kA/cm2 and maximum laser power over 18 mW was achieved at 2.5 A. The un-optimized V-shaped PC holes led to weak optical coupling, which was manifested in the reconstructed band structure without clear bandgap opening at $\Gamma $ point. Therefore, one-dimensional lasing oscillation was favored and radiation far-field exhibited two-lobe pattern. Lastly, temperature dependent threshold currents and lasing wavelengths of PC-SELs were measured and investigated in terms of gain-cavity detuning.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Journal of Quantum Electronics
IEEE Journal of Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.70
自引率
4.00%
发文量
99
审稿时长
3.0 months
期刊介绍: The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信