一种测量介电体在电子辐照下充电动力学的新方法

IF 2.5 3区 工程技术 Q1 MICROSCOPY
E.I. Rau, A.A. Tatarintsev, E.Yu. Zykova
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引用次数: 0

摘要

提出了一种在扫描电子显微镜下测量介质靶在中能电子照射下的充电电位的新方法。该方法基于标准半导体或闪烁探测器对背散射电子信号的测量。信号通过扫描电镜屏幕上的灰度级预先校准。探测器信号由背散射电子和二次电子组成,这些电子在辐照下介电表面上产生的电场中被加速。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel method for measuring the charging kinetics of dielectrics under electron irradiation in SEM

A novel method is proposed to measure the charging potential of dielectric targets under medium energy electron irradiation in a scanning electron microscope. The method is based on the measurement of backscattered electron signals by standard semiconductor or scintillation detectors. The signal is pre-calibrated by grey scale levels on the SEM screen. The detector signal is made up with backscattered and secondary electrons which are accelerated in the electric field created above the dielectric surface under irradiation.

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来源期刊
Micron
Micron 工程技术-显微镜技术
CiteScore
4.30
自引率
4.20%
发文量
100
审稿时长
31 days
期刊介绍: Micron is an interdisciplinary forum for all work that involves new applications of microscopy or where advanced microscopy plays a central role. The journal will publish on the design, methods, application, practice or theory of microscopy and microanalysis, including reports on optical, electron-beam, X-ray microtomography, and scanning-probe systems. It also aims at the regular publication of review papers, short communications, as well as thematic issues on contemporary developments in microscopy and microanalysis. The journal embraces original research in which microscopy has contributed significantly to knowledge in biology, life science, nanoscience and nanotechnology, materials science and engineering.
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