Shock Tube Study of the Reaction of Si Atoms with SiCl4

Abstract

The reaction of Si atoms with SiCl₄ was studied behind reflected shock waves at temperatures between 1530 and 1800 K and pressures around 1.7 bar by applying atomic resonance absorption spectroscopy (ARAS) for time-resolved measurement of Si atoms. The thermal decomposition of a few ppm Si₂H₆ was used as source for Si-atoms. The presence of an excess of SiCl₄ causes a fast consumption of Si atoms, which follows a pseudo-first-order rate law. The rate coefficient for the reaction of Si atoms with SiCl₄

was determined to be:

k₁ = 4.0±0.2×10¹³cm³ mol⁻¹s⁻¹

with no observable temperature dependence in the temperature range of the present study.