Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage

Abstract

Power loss has long been a problem that humans continue to explore, especially in this high-performance era, in which the question of how to reduce the power loss of electronic products is an important issue. In this paper, Split-Gate MOSFETs were studied for parameter optimization and cell pitch miniaturization. The size of cell pitch is reduced to 1.45 um and specific on-resistance reduced to 79.81 mΩ-um² when the breakdown voltage is kept higher than 60 V. The power loss is reduced by almost 70% comparison to commercial Split-Gate Trench MOSFETs.