{"title":"Impact of back gate work function for enhancement of analog/RF performance of AJDMDG Stack MOSFET","authors":"Arighna Basak , Angsuman Sarkar","doi":"10.1016/j.ssel.2020.12.005","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, the impact of back gate work function on analog/RF performance of Asymmetric Junctionless Dual Material Double Gate MOSFET with high K gate Stack (AJDMDG Stack MOSFET) has been studied. The impact of back gate work function on analog/RF parameters like drain current (I<sub>D</sub>), transconductance (g<sub>m</sub>), transconductance generation factor (TGF), intrinsic gain, output resistance (r<sub>out</sub>), cut-off frequency, maximum frequency of oscillation (f<sub>max</sub>) etc. have been studied through TCAD device simulator. The results reveal that an improvement in analog/RF performance has been achieved by choosing a low value work function of the back gate.</p></div>","PeriodicalId":101175,"journal":{"name":"Solid State Electronics Letters","volume":"2 ","pages":"Pages 117-123"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.ssel.2020.12.005","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589208821000016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this work, the impact of back gate work function on analog/RF performance of Asymmetric Junctionless Dual Material Double Gate MOSFET with high K gate Stack (AJDMDG Stack MOSFET) has been studied. The impact of back gate work function on analog/RF parameters like drain current (ID), transconductance (gm), transconductance generation factor (TGF), intrinsic gain, output resistance (rout), cut-off frequency, maximum frequency of oscillation (fmax) etc. have been studied through TCAD device simulator. The results reveal that an improvement in analog/RF performance has been achieved by choosing a low value work function of the back gate.
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