32 Element Piezoelectric Micromachined Ultrasound Transducer (PMUT) Phased Array for Neuromodulation

Pannawit Tipsawat;Sheikh Jawad Ilham;Jung In Yang;Zeinab Kashani;Mehdi Kiani;Susan Trolier-Mckinstry
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引用次数: 4

Abstract

Interest in utilizing ultrasound (US) transducers for non-invasive neuromodulation treatment, including for low intensity transcranial focused ultrasound stimulation (tFUS), has grown rapidly. The most widely demonstrated US transducers for tFUS are either bulk piezoelectric transducers or capacitive micromachine transducers (CMUT) which require high voltage excitation to operate. In order to advance the development of the US transducers towards small, portable devices for safe tFUS at large scale, a low voltage array of US transducers with beam focusing and steering capability is of interest. This work presents the design methodology, fabrication, and characterization of 32-element phased array piezoelectric micromachined ultrasound transducers (PMUT) using $1.5~\mu \text{m}$ thick Pb(Zr 0.52 Ti $_{{\mathrm {0.48}}})\text{O}_{3}$ films doped with 2 mol% Nb. The electrode/piezoelectric/electrode stack was deposited on a silicon on insulator (SOI) wafer with a $2~\mu \text{m}$ silicon device layer that serves as the passive elastic layer for bending-mode vibration. The fabricated 32-element PMUT has a central frequency at 1.4 MHz. Ultrasound beam focusing and steering (through beamforming) was demonstrated where the array was driven with 14.6 V square unipolar pulses. The PMUT generated a maximum peak-to-peak focused acoustic pressure output of 0.44 MPa at a focal distance of 20 mm with a 9.2 mm and 1 mm axial and lateral resolution, respectively. The maximum pressure is equivalent to a spatial-peak pulse-average intensity of 1.29 W/cm 2 , which is suitable for tFUS application.

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用于神经调节的32元压电微机械超声换能器相控阵
利用超声(US)换能器进行非侵入性神经调节治疗,包括低强度经颅聚焦超声刺激(tFUS),已经迅速增长。用于tFUS的最广泛演示的美国换能器是体压电换能器或电容式微机械换能器(CMUT),它们需要高压激励才能工作。为了推动US换能器向小型、便携式的大规模安全tFUS设备的发展,具有波束聚焦和转向能力的低压US换能器阵列引起了人们的兴趣。本文介绍了32元相控阵压电微机械超声换能器(PMUT)的设计方法、制造和表征,该换能器使用掺杂2mol % Nb的1.5~\mu \text{m}$厚Pb(Zr0.52Ti $_{\ mathm {0.48}}})\text{O}_{3}$薄膜。电极/压电/电极堆栈沉积在绝缘体硅(SOI)晶圆上,其中$2~\mu \text{m}$硅器件层作为弯曲模振动的被动弹性层。制造的32元PMUT的中心频率为1.4 MHz。在14.6 V方单极脉冲驱动下,演示了超声波束聚焦和转向(通过波束形成)。在焦距为20 mm时,PMUT产生的最大峰对峰聚焦声压输出为0.44 MPa,轴向分辨率为9.2 mm,横向分辨率为1mm。最大压力相当于1.29 W/cm2的空间峰值脉冲平均强度,适合于tFUS应用。
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