Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding

J. Hotchkiss, V. Vuorinen, Hongqun Dong, G. Ross, J. Kaaos, M. Paulasto-Kröckel, T. Wernicke, A. Pönninger
{"title":"Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding","authors":"J. Hotchkiss, V. Vuorinen, Hongqun Dong, G. Ross, J. Kaaos, M. Paulasto-Kröckel, T. Wernicke, A. Pönninger","doi":"10.1109/ESTC48849.2020.9229696","DOIUrl":null,"url":null,"abstract":"The Solid Liquid Interdiffusion (SLID) bonds carried out for this work take advantage of the Cu-In-Sn ternary system to achieve low temperature wafer-level bonds. The experiments were carried out across a range of temperatures and the results cover optimized wafer-level bonding process, the formation of the bond microstructure, mechanical performance, as well as the effects of thermal aging.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"86 10","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESTC48849.2020.9229696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The Solid Liquid Interdiffusion (SLID) bonds carried out for this work take advantage of the Cu-In-Sn ternary system to achieve low temperature wafer-level bonds. The experiments were carried out across a range of temperatures and the results cover optimized wafer-level bonding process, the formation of the bond microstructure, mechanical performance, as well as the effects of thermal aging.
Cu-Sn-In体系低温晶片级固液互扩散键合的研究
本研究的固液互扩散键利用Cu-In-Sn三元体系实现了低温晶圆级键。实验在一定温度范围内进行,结果涵盖了优化的晶圆级键合工艺、键合微观结构的形成、力学性能以及热时效的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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