Damage Effect of Devices Induced by High Power Terahertz-wave

Abstract

A two-dimensional electro-thermal model of bipolar transistor irradiated by high power terahertz wave is established. The transient behaviors of the bipolar transistor are simulated and analyzed when high power terahertz wave is injected. The damage effect of the electric field, current density and temperature are observed theoretically. The voltage amplitude and the frequency on the device are investigated in detail. Empirical formulas of power damage threshold and energy damage threshold with pulse-width are summarized.