Switching dynamics in ferroelectric-charge hybrid nonvolatile memory

Abstract

A statistical model is proposed for ferroelectric (FE) polarization switching response during program and retention in FE-charge hybrid nonvolatile memory. During the program pulse, high fields first occur in the FE layer and then transfer to tunnel oxide after FE polarization, which leads to a two-step process: (a) rapid domain switching (~1ns - 100ns) and (b) electron injection into the floating gate (~10μs - 1ms). This device can be potentially used as a dual-mode memory with a fast low-retention mode (DRAM), and a slower high-retention mode (Flash).