{"title":"Improved Device Performance of MoTe2 nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric","authors":"Yuan Liu, Zijian Xie, Li Yang, Xiaokun Wen, Wenyu Lei, Haixin Chang, Wenfeng Zhang","doi":"10.1109/ICSICT49897.2020.9278339","DOIUrl":null,"url":null,"abstract":"In this paper, we focus on improving MoTe<inf>2</inf> nanoribbon MOSFETs device performance, with solution-processed HfAlOx high-k dielectric film compared with SiO<inf>2</inf>. First, 2H-MoTe<inf>2</inf> nanoribbons with high purity and quality were synthesized by CVD process. Then, solution-processed synthesis of HfAlOx thin film was systematically investigated. HfAlOx thin film obtained with 0.3M precursor concentration, annealing at 400°C in mixed gas of N<inf>2</inf>(95%) + H2(5%) showed low leakage current density and high k value. Finally, improved device performance of MoTe<inf>2</inf> nanoribbon transistors with mobility ~9.35 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, I<inf>on</inf>/I<inf>off</inf> ratio ~1.85×l0<sup>5</sup>, and the threshold voltage ~ -3.52V were demonstrated.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"6 8","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT49897.2020.9278339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we focus on improving MoTe2 nanoribbon MOSFETs device performance, with solution-processed HfAlOx high-k dielectric film compared with SiO2. First, 2H-MoTe2 nanoribbons with high purity and quality were synthesized by CVD process. Then, solution-processed synthesis of HfAlOx thin film was systematically investigated. HfAlOx thin film obtained with 0.3M precursor concentration, annealing at 400°C in mixed gas of N2(95%) + H2(5%) showed low leakage current density and high k value. Finally, improved device performance of MoTe2 nanoribbon transistors with mobility ~9.35 cm2V−1s−1, Ion/Ioff ratio ~1.85×l05, and the threshold voltage ~ -3.52V were demonstrated.