T. Miyamoto, T. Takada, K. Takeuchi, F. Koyama, K. Iga
{"title":"Design and Expected Characteristics of 1.3μm GaInNAs/GaAs Vertical Cavity Surface Emitting Lasers","authors":"T. Miyamoto, T. Takada, K. Takeuchi, F. Koyama, K. Iga","doi":"10.1364/qo.1997.qfb.5","DOIUrl":null,"url":null,"abstract":"The long wavelength vertical cavity surface emitting laser (VCSEL) is becoming one of key devices for future optical communication and interconnection systems. Room temperature (RT) continuous-wave (CW) operations were demonstrated for long wavelength VCSELs with a reduced threshold current and an increased operating temperature [1, 2]. However, temperature characteristics such as characteristic temperature T0 and the maximum operating temperature are not sufficient for use in actual systems. These are due to carrier leakage related to the small conduction-band discontinuity of GaInAsP/InP systems, difficulties in fabrication of small current confining structures and high reflective mirrors, a large non-radiative absorption, and so on. Recently, the GaInNAs material was proposed as a new long wavelength system emitting 1.3μm and 1.55μm grown on GaAs substrates [3] and 1.2μm RT-CW operations of edge emitting lasers have been demonstrated [4]. The bandgap bowing between arsenide and nitride system is very large and thus long wavelength emission and large conduction-band offset are expected for this material system.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"8 1","pages":""},"PeriodicalIF":1.0000,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Physics Quantum Electronics & Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qo.1997.qfb.5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"QUANTUM SCIENCE & TECHNOLOGY","Score":null,"Total":0}
引用次数: 0
Abstract
The long wavelength vertical cavity surface emitting laser (VCSEL) is becoming one of key devices for future optical communication and interconnection systems. Room temperature (RT) continuous-wave (CW) operations were demonstrated for long wavelength VCSELs with a reduced threshold current and an increased operating temperature [1, 2]. However, temperature characteristics such as characteristic temperature T0 and the maximum operating temperature are not sufficient for use in actual systems. These are due to carrier leakage related to the small conduction-band discontinuity of GaInAsP/InP systems, difficulties in fabrication of small current confining structures and high reflective mirrors, a large non-radiative absorption, and so on. Recently, the GaInNAs material was proposed as a new long wavelength system emitting 1.3μm and 1.55μm grown on GaAs substrates [3] and 1.2μm RT-CW operations of edge emitting lasers have been demonstrated [4]. The bandgap bowing between arsenide and nitride system is very large and thus long wavelength emission and large conduction-band offset are expected for this material system.