Design and Expected Characteristics of 1.3μm GaInNAs/GaAs Vertical Cavity Surface Emitting Lasers

IF 1 Q4 QUANTUM SCIENCE & TECHNOLOGY
T. Miyamoto, T. Takada, K. Takeuchi, F. Koyama, K. Iga
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引用次数: 0

Abstract

The long wavelength vertical cavity surface emitting laser (VCSEL) is becoming one of key devices for future optical communication and interconnection systems. Room temperature (RT) continuous-wave (CW) operations were demonstrated for long wavelength VCSELs with a reduced threshold current and an increased operating temperature [1, 2]. However, temperature characteristics such as characteristic temperature T0 and the maximum operating temperature are not sufficient for use in actual systems. These are due to carrier leakage related to the small conduction-band discontinuity of GaInAsP/InP systems, difficulties in fabrication of small current confining structures and high reflective mirrors, a large non-radiative absorption, and so on. Recently, the GaInNAs material was proposed as a new long wavelength system emitting 1.3μm and 1.55μm grown on GaAs substrates [3] and 1.2μm RT-CW operations of edge emitting lasers have been demonstrated [4]. The bandgap bowing between arsenide and nitride system is very large and thus long wavelength emission and large conduction-band offset are expected for this material system.
1.3μm GaInNAs/GaAs垂直腔面发射激光器的设计与预期特性
长波垂直腔面发射激光器(VCSEL)正在成为未来光通信和互连系统的关键器件之一。室温(RT)连续波(CW)操作证明了长波vcsel具有降低的阈值电流和提高的工作温度[1,2]。然而,诸如特征温度T0和最高工作温度等温度特性不足以在实际系统中使用。这是由于与GaInAsP/InP系统的小导带不连续有关的载流子泄漏,制造小电流限制结构和高反射镜的困难,大的非辐射吸收等。最近,GaInNAs材料被提出作为在GaAs衬底上生长的一种新的发射1.3μm和1.55μm的长波系统[3],并且已经证明了边缘发射激光器的1.2μm RT-CW操作[4]。砷化物和氮化物体系之间的带隙弯曲非常大,因此该材料体系有望实现长波长发射和大导带偏移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
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