Physics of 1.3 /spl mu/m (GaIn)(NAs)/GaAs semiconductor lasers

Abstract

Summary form only given. We study experimentally the emission dynamics of an optically pumped MOCVD grown 1.3 /spl mu/m (GaIn)(NAs)/GaAs VCSEL with a particular focus on the temperature dependence of the emission. We use optical excitation with a 100 fs Ti:sapphire laser to measure the emission dynamics of our VCSEL. The dynamics at room temperature are in the picosecond range (peak delay-time of 15.5 ps after excitation and pulse width of 10.5 ps). Moreover, we find laser emission with picosecond dynamics for temperatures between 30 K and 388 K.