Microstructure Formation on Polytetrafluoroethylene (PTFE) and Perfluoroalkoxy (PFA) Bulk Plates by a Magnetron Enhanced Reactive Ion Etching System

H. Nabesawa, T. Hitobo, T. Asaji, T. Abe, M. Seki
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Abstract

The etching characteristics of polytetra‰uoroethylene (PTFE) and per‰uoroalkoxy (PFA) bulk plates were studied in a magnetron enhanced reactive ion etching (M-RIE) system. The etch rates of the plates for oxygen plasma were investigated under the pressure range 0.1–2.0 Pa, and were found to strongly correlate with the self-bias voltage. The plates presented smooth surface in the 0.1–1.0 Pa pressure range, and rough surfaces at 1.5 Pa and 2.0 Pa. The roughness was introduced by a micromask sputtered from the chamber material. The titanium etching mask exhibited lower etch rates for oxygen plasma than aluminum and silicon dioxide. Finally, using the dry-etched titanium mask in low-pressure oxygen plasma, we fabricated a 5- m m pitch line-and-space structure on a PTFE plate and a 4- m m square pillar array on a PFA plate.
磁控管增强反应离子蚀刻系统在聚四氟乙烯(PTFE)和全氟烷氧基(PFA)体板上的微结构形成
在磁控管增强反应离子刻蚀(M-RIE)系统中研究了聚四氟乙烯(PTFE)和四氟烷氧基(PFA)体片的刻蚀特性。在0.1 ~ 2.0 Pa压力范围内,对氧等离子体刻蚀速率进行了研究,发现刻蚀速率与自偏置电压密切相关。在0.1 ~ 1.0 Pa压力范围内,板材表面光滑,在1.5和2.0 Pa压力范围内,板材表面粗糙。粗糙度是由腔室材料溅射的微掩膜引入的。钛刻蚀掩膜对氧等离子体的刻蚀速率低于铝和二氧化硅。最后,在低压氧等离子体中使用干蚀刻钛掩模,在聚四氟乙烯板上制作了5 m m间距的线间距结构,在PFA板上制作了4 m m方柱阵列。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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