{"title":"Microstructure Formation on Polytetrafluoroethylene (PTFE) and Perfluoroalkoxy (PFA) Bulk Plates by a Magnetron Enhanced Reactive Ion Etching System","authors":"H. Nabesawa, T. Hitobo, T. Asaji, T. Abe, M. Seki","doi":"10.3131/JVSJ2.60.176","DOIUrl":null,"url":null,"abstract":"The etching characteristics of polytetra‰uoroethylene (PTFE) and per‰uoroalkoxy (PFA) bulk plates were studied in a magnetron enhanced reactive ion etching (M-RIE) system. The etch rates of the plates for oxygen plasma were investigated under the pressure range 0.1–2.0 Pa, and were found to strongly correlate with the self-bias voltage. The plates presented smooth surface in the 0.1–1.0 Pa pressure range, and rough surfaces at 1.5 Pa and 2.0 Pa. The roughness was introduced by a micromask sputtered from the chamber material. The titanium etching mask exhibited lower etch rates for oxygen plasma than aluminum and silicon dioxide. Finally, using the dry-etched titanium mask in low-pressure oxygen plasma, we fabricated a 5- m m pitch line-and-space structure on a PTFE plate and a 4- m m square pillar array on a PFA plate.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"65 1","pages":"176-181"},"PeriodicalIF":0.0000,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Vacuum Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3131/JVSJ2.60.176","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The etching characteristics of polytetra‰uoroethylene (PTFE) and per‰uoroalkoxy (PFA) bulk plates were studied in a magnetron enhanced reactive ion etching (M-RIE) system. The etch rates of the plates for oxygen plasma were investigated under the pressure range 0.1–2.0 Pa, and were found to strongly correlate with the self-bias voltage. The plates presented smooth surface in the 0.1–1.0 Pa pressure range, and rough surfaces at 1.5 Pa and 2.0 Pa. The roughness was introduced by a micromask sputtered from the chamber material. The titanium etching mask exhibited lower etch rates for oxygen plasma than aluminum and silicon dioxide. Finally, using the dry-etched titanium mask in low-pressure oxygen plasma, we fabricated a 5- m m pitch line-and-space structure on a PTFE plate and a 4- m m square pillar array on a PFA plate.