Low cost TSV fabrication technologies using anisotropic Si wet etching and conformal electroless plating of barrier and seed metals

Tomohiro Shimizu, S. Shingubara, K. Matsui, Y. Torinari, Shigeru Watariguchi, H. Watanabe, M. Motoyoshi
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Abstract

We developed TSV fabrication process using the anisotropic wet etching of Si assisted by noble metal catalyst and electroless plating of CoWB barrier and Cu seed layers. These methods are essentially low cost as compared to conventional dry etching and CVD methods which use high vacuum chamber systems. Controllability of anisotropic Si etching is improved with the use of catalytic Au disk with nanopores and adequate choice of a mixing ratio of HF and H2O2 in etching solutions. Conformal deposition of CoWB barrier film is possible even for a high aspect ratio TSV with choice of adequate temperature. We have developed equipment of 8 inch processes for both Si etching and electroless plating.
利用各向异性硅湿法蚀刻和共形化学镀阻挡金属和种子金属的低成本TSV制造技术
我们开发了利用贵金属催化剂辅助硅的各向异性湿法蚀刻和化学镀cob阻挡层和Cu种子层的TSV制备工艺。与使用高真空室系统的传统干蚀刻和CVD方法相比,这些方法基本上成本低。采用具有纳米孔的催化金盘,适当选择HF和H2O2在蚀刻溶液中的混合比例,提高了各向异性硅蚀刻的可控性。在合适的温度条件下,高宽高比的TSV也有可能实现cob阻挡膜的保形沉积。我们开发了8英寸工艺设备,用于硅蚀刻和化学镀。
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