Coupled Si and SiO/sub 2/ Monte Carlo device simulator for accurate gate current calculation

T. Ezaki, H. Nakasato, M. Hane
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引用次数: 3

Abstract

A new MOSFET device simulator has been developed based on a coupled Monte Carlo procedure for the carrier transport in both Si and SiO/sub 2/ regions. This simulator accounts for the image force effect that modulates potential barrier height for the electrons injected into the SiO/sub 2/. Gate currents are calculated combining both the hot carrier injection and the back-scattering from the SiO/sub 2/ region arising from the potential modulation. Flash memory cell simulations were performed by this method. The actual MOSFET gate currents and the programming characteristics of the flash memory cells could be reproduced quantitatively without using any adjustable parameters.
耦合Si和SiO/sub 2/蒙特卡罗器件模拟器,用于精确的栅极电流计算
基于耦合蒙特卡罗程序开发了一种新的MOSFET器件模拟器,用于在Si和SiO/sub - 2/区域进行载流子传输。该模拟器考虑了像力效应,该效应调节了注入SiO/sub /的电子的势垒高度。结合热载流子注入和由电位调制引起的SiO/sub /区域的后向散射计算门电流。采用该方法对快闪存储单元进行了仿真。实际的MOSFET栅极电流和闪存单元的编程特性可以在不使用任何可调参数的情况下定量地再现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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