Van der Waals epitaxial growth and optoelectronics of a vertical MoS₂/WSe₂ p-n junction.

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Frontiers of Optoelectronics Pub Date : 2022-10-11 DOI:10.1007/s12200-022-00041-4

Yu Xiao, Junyu Qu, Ziyu Luo, Ying Chen, Xin Yang, Danliang Zhang, Honglai Li, Biyuan Zheng, Jiali Yi, Rong Wu, Wenxia You, Bo Liu, Shula Chen, Anlian Pan

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引用次数: 6

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p-n junction WSe₂/MoS₂ produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm²/(V·s). In addition, the photodetector based on MoS₂/WSe₂ heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 10¹¹ Jones, on/off ratio of 10⁴), which benefited from the built-in electric field across the interface. The direct growth of TMDs p-n vertical heterostructures may offer a novel platform for future optoelectronic applications.

Abstract Image

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垂直MoS2/WSe2 p-n结的范德华外延生长和光电子学。

二维(2D)过渡金属二硫族化合物(TMDs)由于其独特的电子和光学性质而引起了广泛的关注。特别是，TMDs可以灵活地组合形成多种垂直范德华(vdWs)异质结构，而不受晶格匹配的限制，这为新型光电应用的基础研究创造了巨大的机会。在这里，我们报告了一个原子薄的垂直p-n结WSe2/MoS2由化学气相沉积方法。透射电镜和稳态光致发光实验表明其具有优良的光学性能。使用该pn结构建的后栅场效应晶体管(FET)表现出双极行为和9 cm2/(V·s)的迁移率。此外，基于MoS2/WSe2异质结构的光电探测器显示出优异的光电性能(R = 8 A/W, D* = 2.93 × 1011 Jones，开/关比为104)，这得益于内置的跨界面电场。直接生长的tmd p-n垂直异质结构可能为未来的光电应用提供一个新的平台。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

7.80

自引率

0.00%

发文量

583

期刊介绍： Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more