Design of a high sensitivity capacitive force sensor

H. Chu, J. Mills, W. Cleghorn
{"title":"Design of a high sensitivity capacitive force sensor","authors":"H. Chu, J. Mills, W. Cleghorn","doi":"10.1109/NANO.2007.4601134","DOIUrl":null,"url":null,"abstract":"This paper presents the design and development of a MEMS based, capacitive sensor for micro-force measurement. The sensor has an overall dimension of 3600 mum times 1000 mum times 10 mum and was fabricated using the Micragem fabrication process. A displacement reduction mechanism is incorporated in this sensor design to increase the sensitivity of the sensor. Analysis from Finite Element software, COMSOL, confirms that a 10:1 displacement reduction ratio is achievable with this mechanism. Simulation results show that the sensor is capable of measuring a maximum force input of 11 milli-Newton, resulting from a 20-mum displacement on the sensing structure. A 6-DOF manipulator and an evaluation board were used to experimentally verify the performance the sensor. Experimental results show that a capacitance change of approximately 175 to 200 fF can be observed from a 20-mum displacement.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2007.4601134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

Abstract

This paper presents the design and development of a MEMS based, capacitive sensor for micro-force measurement. The sensor has an overall dimension of 3600 mum times 1000 mum times 10 mum and was fabricated using the Micragem fabrication process. A displacement reduction mechanism is incorporated in this sensor design to increase the sensitivity of the sensor. Analysis from Finite Element software, COMSOL, confirms that a 10:1 displacement reduction ratio is achievable with this mechanism. Simulation results show that the sensor is capable of measuring a maximum force input of 11 milli-Newton, resulting from a 20-mum displacement on the sensing structure. A 6-DOF manipulator and an evaluation board were used to experimentally verify the performance the sensor. Experimental results show that a capacitance change of approximately 175 to 200 fF can be observed from a 20-mum displacement.
高灵敏度电容式力传感器的设计
本文介绍了一种基于MEMS的电容式微力传感器的设计与开发。该传感器的整体尺寸为3600 μ m × 1000 μ m × 10 μ m,采用微热成像制造工艺制造。在该传感器设计中加入了位移减小机构,以增加传感器的灵敏度。有限元软件COMSOL的分析证实,采用这种机制可以实现10:1的减排量比。仿真结果表明,该传感器能够测量由传感器结构上20 μ m的位移产生的最大力输入为11毫牛顿。利用六自由度机械臂和评估板对传感器的性能进行了实验验证。实验结果表明,在20 μ m的位移下,电容变化约为175 ~ 200ff。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信