W. L. Jiang, M. S. Zaman, S. Murray, H. De Vleeschouwer, J. Roig, P. Moens, O. Trescases
{"title":"GaN PMIC Opportunities: Characterization of Analog and Digital Building Blocks in a 650V GaN-on-Si Platform","authors":"W. L. Jiang, M. S. Zaman, S. Murray, H. De Vleeschouwer, J. Roig, P. Moens, O. Trescases","doi":"10.1109/VLSITechnology18217.2020.9265112","DOIUrl":null,"url":null,"abstract":"This paper reports the performance of GaN -based building blocks for monolithic integration. An integrated gate driver, low-voltage analog and synchronous digital circuits are fabricated in a 650-V GaN-on-Si process and measured. Calibrated GaN models are compared against simulated silicon designs to identify optimal integration criteria.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"34 3 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper reports the performance of GaN -based building blocks for monolithic integration. An integrated gate driver, low-voltage analog and synchronous digital circuits are fabricated in a 650-V GaN-on-Si process and measured. Calibrated GaN models are compared against simulated silicon designs to identify optimal integration criteria.