プラズマ化学気相堆積におけるグラフェン成長過程の偏光解析モニタリング;プラズマ化学気相堆積におけるグラフェン成長過程の偏光解析モニタリング;Ellipsometric Monitoring of First Stages of Graphene Growth in Plasma-Enhanced Chemical Vapor Deposition

Abstract

Ellipsometry monitoring was carried out in-situ for the analyses of substrate surface in the ˆrst stages of graphene growth in magnetron plasma-enhanced chemical vapor deposition. By the comparison of the experimentally obtained trajectory of ellipsometric parameters on the CD coordinate plane to that of the calculated ones, it has been found that graphene tends to grow parallel to substrate surface under the pressure of 10 Pa while perpendicularly under that of 200 Pa.