The characteristics of holographic grating in chalcogenide thin films

Jeong-Il Park, Jong-Hwa Park, K. Shin, Jin-Woo Kim, Young-Jong Lee, H. Chung
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Abstract

We have investigated the polarization dependence of holographic gratings in chalcogenide Se/sub 75/Ge/sub 25/ and As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35/ thin films. The films have been irradiated using a linearly polarized He-Ne laser at 633 nm. To observe the etching characteristic, the films have been etched with NaOH solution. Film thicknesses were about 1 /spl mu/m and 3 /spl mu/m, and were monitored with a quartz oscillator during deposition and measured with the NKT1200 analyzer. A self-relief grating was formed in As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35/ thin film.
硫系薄膜全息光栅的特性
我们研究了硫系Se/sub 75/Ge/sub 25/和As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35/薄膜全息光栅的偏振依赖性。用线偏振氦氖激光在633 nm处照射薄膜。为了观察膜的蚀刻特性,采用NaOH溶液对膜进行蚀刻。薄膜厚度分别为1 /spl mu/m和3 /spl mu/m,在沉积过程中使用石英振荡器监测,并使用NKT1200分析仪测量。在As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35/薄膜上形成自缓蚀光栅。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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