III-V on Si solar cells behavior at NIRT and LILT conditions for space applications

Abstract

In this study, we review the potential of III-V/Si solar cell technology for space applications. We present here the experimental results of wafer bonded 2-terminal III-V/Si solar cells electron irradiation. The Begin-Of-Life (BOL) and End-Of-Life (EOL) electrical performances, after 1-MeV electron irradiations, are characterized under AM0 spectrum, and the radiation hardness is compared in Normal Irradiance Room Temperature (NIRT) and Low Irradiance Low Temperature (LILT) conditions.