A 25.9-GHz voltage-controlled oscillator fabricated in a CMOS process

C. Hung, L. Shi, K. O
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引用次数: 45

Abstract

A 25.9-GHz voltage-controlled oscillator (VCO) has been demonstrated using 0.1-/spl mu/m NMOS transistors in a partially scaled CMOS process. The tuning range and output power level are 600 MHz and /spl sim/-22 dBm. The phase noise at a 3-MHz offset is -106 dBc/Hz when the VCO core consumes 24 mW from a 1.5-V supply. This VCO uses a MOS varactor with Q>20 at 26 GHz. Though Q is higher, due to the polysilicon gate depletion effect, the frequency tuning is not monotonic and a mechanism to limit the control voltage range is needed for phase-locked loop (PLL) applications.
采用CMOS工艺制备的25.9 ghz压控振荡器
在部分缩放的CMOS工艺中,使用0.1-/spl mu/m的NMOS晶体管演示了25.9 ghz压控振荡器(VCO)。调谐范围和输出功率电平为600 MHz和/spl sim/-22 dBm。当VCO核心从1.5 v电源消耗24 mW时,3 mhz偏移的相位噪声为-106 dBc/Hz。该VCO采用26 GHz时Q>20的MOS变容管。虽然Q较高,但由于多晶硅栅极损耗效应,频率调谐不是单调的,锁相环(PLL)应用需要一种限制控制电压范围的机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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