Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate

Abstract

The off-state breakdown voltage of a double-channel AlGaN/GaN HEMT is improved by employing an air-bridge field plate (AFP) and a slant field plate at the gate electrode. It has been observed that using the AFP only can reduce the peak electric field under the gate edge to a certain extent, and a slant field plate can be added to obtain an even better result. The breakdown voltage is increased from 19 V of the initial structure to 200 V of the optimized structure.