Modelling and characterization of dynamic behavior of coupled memristor circuits

Abstract

This paper explores the dynamic behavior of dual flux coupled memristor circuits in order to further ascertain fundamental theory of memristor circuits. Different cases of flux coupling are mathematically modelled where two memristors are connected in both series and parallel, with consideration given to the polarity of each device. The dynamic behavior is characterized based on the constitutive relations, with a variation of memductance represented in terms of flux, charge, voltage and current. The agreement between theoretical and simulation analyses affirm the memristor closure theorem with coupled memristor circuits behaving as a different type of memristor with higher complexity.