Intermixing in InAsP/InP quantum wells induced by dry etching processes

Abstract

InP ridge waveguides with different dimensions, height and width, were fabricated by inductively coupled plasma etching. The InP raw material was provided of nine buried InAsP quantum wells with variable composition and at different depths, in order to study the damage produced in the structure by the dry etching process. The etched guides were studied by spectrally resolved cathodoluminescence. The changes induced in the quantum wells by different etching chemistries were analyzed. Other parameters as the etching time, and guide dimensions were considered.