Remedies to control electromigration: Effects of CNT doped Sn-Ag-Cu interconnects

Abstract

Electromigration is a critical reliability problem in electronic industry, especially with the shrinkage and downscaling of microelectronic feature size, which results in gradual increase of current density. Carbon nanotube(CNT) doping is adopted in this paper. CNT has demonstrated high electromigration resistance. In our work, CNT doping is combined with SAC interconnects. A CNT after surfactant will be incorporated into SAC solder interconnection. Best percentage of CNT doping is found from this experiment, and better electromigration reliability can be observed from this work by SEM image. Moreover, the shear stress distribution is improved using computational study, which shows better mechanical properties. The combination of experimental and numerical study is highlighted in this work.